Jisu (Aaron) Jiang

Office: 
Bunger Henry 338
E-mail: 
aaron [dot] jiang [at] gatech [dot] edu
Mailing Address: 

School of Chemical & Biomolecular Engineering
Georgia Institute of Technology
311 Ferst Dr. NW
Atlanta, GA 30332-0100

Research: Advances in Low-k and High-k off-chip interconnects
  • High dielectric constant aluminum oxide as embedded capacitor using electrolytic anodization.
  • Low dielectric constant epoxy pore using PPC as porogens.
  • Epoxide PPC as transient adhesives for transient electronic application.
 
Education
  • Ph.D in Chemical and Biomolecular Engineering, Georgia Institute of Technology, expected 2020
  • B.S. in Chemical Engineering, University of Rochester, May 2015

 

Publications
  • J. Jiang, O. Phillips, L. Keller, P. Kohl, "Grafted Epoxide Functionalized Polypropylene Carbonate Porogen for Low Dielectric Constant Epoxy FIlm", ECS Journal of Solid State Science and Technology, 2017, 6(9), N163-N170
  • J. Jiang and P. Kohl, "Fabrication of Precision Integrated Capacitors", Thin Solid Films, 2017, 634, 15-23.
  • Y. Meng, J-C. Yang, C. Lewis, J. Jiang, M. Anthamatten. "Photo-inscription of Chain Anisoropy into Polymer Networks", Macromolecules, 2016, 49(23), 9100-9107
  • Y. Meng, J. Jiang, M. Anthamatten, “Body Temperature Triggered Shape-Memory Polymers with High Elastic Energy Storage Capacity”, Journal of Polymer Science Part B: Polymer Physics, 2016, 54(14), 1397-1404
  • Y. Meng, J. Jiang, M. Anthamatten, “Shape Actuation via Internal Stress-Induced Crystallization of Dual-Cure Networks”, ACS Macro Letters, 2015, 4, 115-118. Editor Choice Award!